Investigating electron depletion effect in amorphous indium–gallium–zinc-oxide thin-film transistor with a floating capping metal by technology computer-aid design simulation and leakage reduction
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Modeling and Simulation of Flexible Oxide Thin Film Transistors
Electrical characteristic of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) on flexible substrate are investigated with various channel width and length. Its electrical properties according to the physical dimension of the channel are analyzed through Technology Computer-Aided Design (TCAD) simulation. Index Terms — Density of states (DOS), flexible, In-GaZn-O (IGZO),...
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Abstract—Amorphous Indium Gallium Zinc Oxide (a-IGZO) thin-film transistors (TFTs) are widely used in backplanes of high-definition displays thanks to the high field effect mobility of a-IGZO. To design high-performances and high-functionality a-IGZO circuits accurate physical modeling is required. In this work we propose a physically based analytical model of the drain current of a-IGZO TFTs. ...
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